Eastern High Tech plans to develop an 8-inch silicon carbide power semiconductor process in 2023
According to the news from
www.jv.com.cn, according to Korean media, DB HiTek, a major Korean wafer foundry, is accelerating the development of silicon carbide power semiconductor manufacturing process, and is expected to start the development of an 8-inch process platform as early as next year.
It is reported that East High Tech is currently promoting the research and development of silicon carbide and gallium nitride processes synchronously. The development of 8-inch process of gallium nitride has been launched and is planned to be completed within 2-3 years. For silicon carbide, the company is currently developing 6-inch process research and development.
The report also revealed that Eastern High Tech would deploy 8-inch silicon carbide power semiconductor manufacturing equipment at the idle site of its production base as early as next year. The relevant person in charge said that the company was optimistic about the prospect of silicon carbide and would solve the supply problem of related equipment through outsourcing and other means.
Compared with traditional silicon based power semiconductors, silicon carbide is considered to have significant potential in the field of power semiconductors due to its wide band gap, high temperature resistance and other characteristics. At present, it has been applied in the main drive of electric vehicles. According to the prediction of Yole Development, the market for silicon carbide power devices will grow from 1.09 billion dollars in 2021 to 6.297 billion dollars in 2027, with a compound annual growth rate of 34%.
